EU and Zelenskiy expected to sign Ukraine security pact

Sur le même sujet

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  1 septembre 2023 | International, C4ISR, Sécurité

  Cloud computing’s balancing act: Are we in a mushroom cloud moment?

  In many ways, the computing cloud is the cyber version of the Trinity mushroom cloud.

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  18 septembre 2018 | International, C4ISR

  BAE Maturing microelectronics for next-generation radar, electronic warfare, and communications systems

  BAE Systems has signed a cooperative agreement with the Air Force Research Laboratory (AFRL) for Phase 1 of a technical effort to transition gallium nitride (GaN) semiconductor technology developed by the U.S. Air Force to our Advanced Microwave Products (AMP) Center. We've signed a cooperative agreement with the Air Force Research Laboratory (AFRL) for Phase 1 of a technical effort to transition gallium nitride (GaN) semiconductor technology developed by the U.S. Air Force to our Advanced Microwave Products (AMP) Center. As part of the effort, we'll transfer and further enhance the technology, and scale it to 6-inch wafers to slash per-chip costs and improve the accessibility of this defense-critical technology. GaN technology provides broad frequency bandwidth, high efficiency, and high transmit power in a small footprint, making it ideal for next-generation radar, electronic warfare, and communications systems. Under the agreement, we will work with AFRL to establish a 140-nanometer GaN monolithic microwave integrated circuit (MMIC) process that will be qualified for production by 2020, with products available to Department of Defense (DoD) suppliers through an open foundry service. “Millimeter-wave GaN technologies today are produced in research and development laboratories in low volumes at high associated costs or in captive foundries that are not broadly accessible to defense suppliers,” said Scott Sweetland, Advanced Microwave Products director at BAE Systems. “This effort will leverage AFRL's high-performance technology and BAE Systems' 6-inch manufacturing capability to advance the state of the art in GaN MMIC performance, reliability, and affordability while providing broader access to this critical technology.” The work on this project will primarily take place in our 70,000-square-foot Microelectronics Center (MEC) in Nashua, New Hampshire, where we research, develop, and produce compound semiconductor materials, devices, circuits, and modules for a wide range of microwave and millimeter-wave applications. The MEC has been an accredited DoD Category 1A Trusted Supplier since 2008, and fabricates integrated circuits in production quantities for critical DoD programs. As part of the project, the AMP Center team will work closely with the company's FAST LabsTM research organization and MMIC design experts from ENGIN-IC. https://www.baesystems.com/en/article/maturing-microelectronics-for-next-generation-radar-electronic-warfare-and-communications-systems

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  17 mars 2023 | International, Aérospatial

  Pentagon chooses Australian firm to build hypersonic test aircraft

  The aircraft, which will support efforts to increase the cadence of hypersonic flight testing, is scheduled to fly for the first time in early 2024.